• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    This light emitting diode array formed of a plurality of semiconductor crystals (1), of which both the P and N regions of opposite types of conduction forming a light-emitting junction are respectively and selectively placed in contact with connecting elements, is characterised in that it comprises at least one strip of light-emitting diodes (1) which is essentially composed of a plurality of semiconductor crystals (1a) disposed at a constant interval, one behind the other, between two connecting bars (2, 3) placed in contact respectively with the P and N regions of said semiconductor crystals (1a). …<IMAGE>…
    公开号:SU1732822A3
    申请号:SU894614954
    申请日:1989-09-21
    公开日:1992-05-07
    发明作者:Ле Крефф Ренс
    申请人:Валео Визьон (Фирма)；
    IPC主号:
    专利说明:

    Such an increase in temperature can lead in some cases to the destruction of most materials, such as plastics, which are part of the reflector or coating layers deposited by the method of metallization in vacuum, and, if necessary, coated with varnish.
    In the closest solution to the invention, the electroluminescent diodes are fixed on the first metal strip constituting the electrical connection of the first polarity, the second metallic strip constituting the electrical connection of the second polarity, is connected to each of the electroluminescent diodes by a connecting wire.
    Such installation, however, does not allow sufficient heat removal in operation, and also has the brittleness caused by the existence of connecting wires that can be broken or disconnected under the influence of heat and vibrations characteristic of their use on automobiles. .
    The purpose of the invention is to increase the reliability of installation.
    The goal is achieved by the network of electroluminescent diodes consisting of a multitude of semiconductor crystals in which both the p- and n-conduction regions forming the electroluminescent compound are in contact with each other and selectively with the connecting elements and have at least one strip of electroluminescent diodes consisting essentially of a plurality of semiconductor crystals, placed one behind the other at some distance from each other between two connecting plates contacting and with the p and n regions of said semiconductor crystals.
    The connecting plates are preferably made of wires made of a material with good electrical conductivity and very good thermal conductivity, such as copper, aluminum, and, if necessary, brass and zinc. Each of the overlays is arranged in such a way as to ensure the sequence of two rows of flat sections, successively perpendicular to one from one series with respect to the others from the other series.
    The flat portions of one of the rows are oriented parallel to the contact areas of each of the semiconductor crystals for assembly by direct soldering.
    Flat areas of one of the rows form cooling fins to dissipate heat released in operation.
    Flat portions of another row, perpendicular between flat planes of the first row, are turned outwardly on the sides of the strip of electroluminescent diodes.
    Fig. 1 shows a part of a network of electroluminescent diodes, Fig. 2 is one of the electroluminescent diodes of a strip on a radiator element, the connections of which are located in a corresponding collimation optical element.
    5 The network of electroluminescent diodes consists of a set of semiconductor crystals 1, mainly of cubic form, arranged with a constant spacing one after the other between two metallic plates 2 and 3 with contacts 4.
    In each crystal 1, at least two regions with opposite conductivity are created in a known manner, forming an electroluminescent compound.
    Each pad is obtained from wires made of a material with good electrical conductivity and very good thermal conductivity. This wire is formed
    0 by a sequence of two rows of sections 5 and 6 of a flat type, successively perpendicular to each other.
    Flat areas 5 of the first row are oriented parallel to the contact area 4
    5 of each crystal 1 in order to connect them directly by soldering using conductive resins with a high polymerization temperature.
    Other sections 6 located perpendicularly between sections 5 of the first row, corresponding to the zone of the interval between semiconductor crystals 1, are turned to the outer side of the side surfaces of the strip by electroluminescent diodes. In Fig. 1, various sections 7-9 obtained after forming the round wire 10 can be seen.
    Sections 6 create a sequence
    0 metal contact pads, which make up the external connecting elements of semiconductor crystals 1 isolated between them, on the one hand, and simultaneously form diffuserator elements in the form of fins, which can dissipate heat dissipated by two opposite areas of the electroluminescent compound of semiconductor crystals 1, .
    The conductor, in which two plates 2 and 3 are formed, may be made of copper, aluminum, brass or zinc. These materials are suitable for forming radiator elements of electroluminescent elements without resorting to the deposition of gold or silver.
    Such a realization of a diode strip, the crystals of which have a cubic shape, emitting light in parts, has numerous advantages, due in particular to its special shape, choice of material and applied assembly method, as well as ease of implementation, which makes it easy to automate installation.
    Implementing a row of crystals 1 in a strip by combining with a constant pitch between two long plates 2 and 3, forming radiator elements and direct connections 5 and 6, necessary for each of the two contact areas of the connection, simplifies their assembly and fastening to any an insulating substrate carrying an optical element (element), for example, parabolic reflectors 11.
    Therefore, an insulating substrate does not require the use of a substance having high heat dissipation characteristics, and such a substance is not expensive.
    As an example, FIG. 2 shows the placement of one of the elementary diodes at the base of the elementary reflector 11, equipped with grooves 12 and 13 for this purpose, into which electrical communication sites of sections b of one of the plates 2, 3 are directly inserted (FIG. .2).
    As a result, the semiconductor crystals 1 are installed exactly at the focus of the reflector 11, which can thus better transmit all the light emitted in its focal center by a portion of the semiconductor crystal 1.
    It is possible to manufacture relatively long strips of diodes, then partition them depending on the required length and place them side by side, connected in series and / or in parallel.
    权利要求:
    Claims (5)
    [1]
    1. An electroluminescent diode network comprising a plurality of semiconductor LEDs, each of which includes two p- and n-type conduction regions, connected to corresponding metal conductive buses, which in order to increase the reliability of the installation, it contains at least , one strip of electroluminescent diodes, located at some distance one behind the other in one row, the corresponding current-conducting busbars of which are made in the form of two connecting plates GOVERNMENTAL contact, respectively, with the p- and n-regions of semiconductor LEDs.
    [2]
    2. A network of diodes pop. 1, characterized in that each of the connecting plates is made as a sequence of two rows of alternately flat sections perpendicular to each other, the flat sections of the first row being oriented parallel to the contact areas of each of the semiconductor LEDs, and the second is perpendicular to them.
    [3]
    3. The network of diodes according to claims 1 and 2. is distinguished by the fact that the connecting plates are made of metal conductors with high electrical and thermal conductivity, from copper and aluminum, brass, and zinc.
    [4]
    4. A network of diodes according to claim 2, characterized in that the flat areas of the second row, located perpendicularly between the areas of the first row, extend outside the side faces of the strip of electroluminescent diodes to form cooling fins.
    [5]
    5. The network of diodes according to claim 4. characterized by the fact that the electric connection sites of flat sections of the second row in the longitudinal direction have a length equal to the interval between the semiconductor light diodes.
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    同族专利:
    公开号 | 公开日
    JPH02181982A|1990-07-16|
    KR900005851A|1990-04-14|
    BR8904408A|1990-04-17|
    US4990971A|1991-02-05|
    ES2048304T3|1994-03-16|
    FR2637150A1|1990-03-30|
    EP0360660B1|1993-11-18|
    DE68910767T2|1994-03-24|
    EP0360660A1|1990-03-28|
    FR2637150B1|1995-07-28|
    DE68910767D1|1993-12-23|
    引用文献:
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    JPS57193079A|1981-05-22|1982-11-27|Nec Corp|Light emitting diode continuous connection structure|
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    SE8200913L|1982-02-16|1983-08-17|Integrerad Teknik Igt Hb|DEVICE FOR LEDS|
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    US4439818A|1983-02-25|1984-03-27|Scheib Joseph J|Flexible light display with evenly distributed illumination|
    US4471415A|1983-06-20|1984-09-11|Wilbrecht Electronics, Inc.|Mounting bar for spacing indicator lights|
    FR2565726B1|1984-06-08|1987-11-27|Radiotechnique Compelec|METHOD FOR PRODUCING A LIGHT SIGNALING PANEL WITH LIGHT EMITTING DIODES AND A PANEL OBTAINED THEREBY.|
    FR2574616B1|1984-12-07|1987-01-23|Radiotechnique Compelec|MATRIX OF ELECTRO-LUMINESCENT ELEMENT AND MANUFACTURING METHOD THEREOF|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    FR8812436A|FR2637150B1|1988-09-23|1988-09-23|LIGHT EMITTING DIODE ARRAY|
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